Method for Producing Graphene

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Aberystwyth University


Chemical, Electronics, Sensors and Photonics, Materials, Physical Sciences

About The Opportunity:

Graphene is grown from diamond through the use of an iron catalyst layer which enables production at industrially applicable temperatures (~600°C). Measurement techniques are used to monitor the growth of the graphene in order to maintain the highest quality graphene.


  • Semi conductors

Key Benefits:

  • uniform graphene layer
  • high purity
  • lower fabrication temperature
  • a larger area of crystalline quality.


IP Status:

A patent, which is published under WO2013038130, has been filed on this method.


Seeking licensing and collaborative research partners, particularly in the area of electronics.